Philips Develops Superior MOS Transistor Model
Philips Research and Pennsylvania State University researchers have developed a new model for metal-oxide semiconductor (MOS) transistor behavior.
Source: GEEK.comThis model, referred to as "PSP" (because it's the result of Philips working with Penn State on the university's SP model and its own MOS Model 11), uses surface potential characteristics based on extensive measurements to approximate transistor behavior. Philips has submitted the PSP model to the Compact Model Council (CMC), the group in charge of maintaining standardized compact models of electronic components. Previous CMC MOS models are based on simplified sub-threshold and strong inversion regime models, which are less accurate than the surface potential model, particularly at high switching speeds. Apparently, Philips' surface potential model accurately predicts transistor behavior well beyond 50GHz, and was verified with many transistors from numerous industrial parties, fabricated with multiple process technologies with feature sizes down to 65 nm. This new transistor model ought to aid developers in accurately simulating the behavior of their high-speed integrated circuits, thereby reducing development time and cost.
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