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Intel Gets Into Metal
[link=http://www.overclockers.com/tips00485/]Intel Gets Into Metal[/link]
Very succinctly, Intel has a power problem. Until fairly recently, its CPUs leaked about 5-10% of its power. That has jumped up quite a bit lately; now its circuits leak far more power (up to about 40% according to some Intel estimates in PIVs), which is why their chips have been resembling furnaces lately.
This problem had to be fixed if Intel expected to go faster, faster, faster long-term.
Well, it looks like they have.
Source: [link=http://www.overclockers.com/tips00485/]Overclockers.com[/link]
[link=http://www.theinquirer.net/?article=12510]Intel claims leakage transistor breakthrough [/link]
Intel claimed today it has discovered a set of new materials for semiconductors that will eliminate current leakage and unwanted heat.
The materials are high-k for the gate dielectric and metal materials for the transistor gate.
The gate essentially acts as a switch and the dielectric acts as an insulator to control the flow of electric current.
The gate materials overcome the fundamental limits of silicon dioxide gate materials, used for the last 30 years or so.
Source: [link=http://www.theinquirer.net/?article=12510]The Inquirer[/link]
Very succinctly, Intel has a power problem. Until fairly recently, its CPUs leaked about 5-10% of its power. That has jumped up quite a bit lately; now its circuits leak far more power (up to about 40% according to some Intel estimates in PIVs), which is why their chips have been resembling furnaces lately.
This problem had to be fixed if Intel expected to go faster, faster, faster long-term.
Well, it looks like they have.
Source: [link=http://www.overclockers.com/tips00485/]Overclockers.com[/link]
[link=http://www.theinquirer.net/?article=12510]Intel claims leakage transistor breakthrough [/link]
Intel claimed today it has discovered a set of new materials for semiconductors that will eliminate current leakage and unwanted heat.
The materials are high-k for the gate dielectric and metal materials for the transistor gate.
The gate essentially acts as a switch and the dielectric acts as an insulator to control the flow of electric current.
The gate materials overcome the fundamental limits of silicon dioxide gate materials, used for the last 30 years or so.
Source: [link=http://www.theinquirer.net/?article=12510]The Inquirer[/link]
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