Samsung has announced that its first 30nm-class DRAM has just completed customer evaluations at a density of 256MB per chip.
With DDR3 DRAM quickly growing to become the prevailing memory standard, Samsung has claimed that its aggressive process advancements will dramatically improve the firm’s DRAM productivity and accelerate the distribution of 1.5V and 1.35V DDR3 for all computing segments.
Applying a 30nm process to mass production DDR3, Samsung says, raises foundry productivity by 60% over 40nm parts. Further, it outrightly doubles the efficiency of foundries manufacturing DRAM on 50-60nm technology, a process still used with some frequency.
Mass production of 30nm DDR3 chipps will begin in the 2H10, while products based on the parts should appear in early 2011 with lower DRAM prices for all.
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