Samsung and Toshiba made a joint announcement committing to a Double Data Rate 2.0 NAND flash memory standard. This new standard will support speeds up to 400 Mbps, a significant improvement over the current 133Mbps maximum speeds available today.
“Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products,” said Masaki Momodomi, Technical Executive, Memory product, Toshiba Corporation. “And we will continue to make the best effort possible to create standard, high-speed NAND Flash interface solutions with NAND vendors and customers, which will accelerate the revolution in storage applications.”
Both companies are participating in the JEDEC Solid State Technology Association to help speed along industry adoption of the new specification.
What this means to you
SSDs, memory cards, cell phones, USB sticks, and a bunch of other devices all use NAND flash memory. The faster the memory, the faster your device can read and write data.
SSDs are a great example of the need for faster memory. The best 2.5″ SSDs available now have read/write speeds around 275MB/s. The way they achieve this is through sophisticated memory controllers using RAID and various other techniques to surpass current speed issues. In theory, the same drive could see read/write speeds of around 825MB/s, or roughly the equivalent of processing a full Blu-Ray disc in 60 seconds, using this newer technology.
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