Today Samsung announced that it has developed the world’s first DDR4 RAM modules. This RAM runs at 2133MHz using an energy-sipping 1.2V. It is built on a 30nm process and is currently planned in capacities up to 2GB.
In addition, the new modules make use of Pseudo Open Drain, a technology that allows the RAM to consume roughly half the power of DDR3 during read and write operations.
The DDR4 standard is currently undergoing the JEDEC standardization process which should be completed later this year.



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