Immediately following the announcement of 30nm 3-bit NAND cells, Samsung has also announced that it is using its new 30nm process to develop DDR NAND.
Adding a double data rate interface to MLCs boosts the per-chip performance of the firm’s 32Gb (4GB) NAND dies from 40/17Mbps to 133/60Mbps, respectively. The new DDR ICs could be used to dramatically improve the throughput of SSDs, and they will initially be featured in premium SD cards and Samsung’s proprietary moviNAND products.
“With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices,” said Soo-In Cho, EVP and GM of the Memory Division at Samsung Electronics.
“Samsung’s accelerated push toward providing memory solutions at much higher speeds will enable faster introduction of high-performance mobile devices that deliver added convenience and greater value to consumers.”
Products based on the DDR NAND cells are expected to hit retail by the end of 1Q10.
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